Onsemi
NTTFS3A08PZTWG
Single P-Channel Power MOSFET -20V, -15A, 6.7mΩ, WDFN8 3.3x3.3, 0.65P, 5000-REEL
PolarityP-CHANNEL
Power2.2W
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Technical Specifications
Onsemi NTTFS3A08PZTWG technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 6.7mR |
| Element Configuration | Single |
| Fall Time | 165ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 840mW |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.2W |
| Radiation Hardening | No |
| Rds On Max | 6.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 250ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS3A08PZTWG Datasheet
Download the complete datasheet for Onsemi NTTFS3A08PZTWG to view detailed technical specifications.
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