Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 57A continuous drain current. Offers low 7mΩ Rds On resistance for efficient power switching. Designed for surface mount applications in a compact WDFN8 package with a 3.3x3.3mm footprint. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including 4.5ns fall time and 12ns turn-on delay. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power4.1W
Quick Jump:
Technical Specifications
Onsemi NTTFS4821NTAG technical specifications.
General
| Continuous Drain Current (ID) | 57A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8.8R |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 1.755nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.1W |
| Radiation Hardening | No |
| Rds On Max | 7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 12ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS4821NTAG Datasheet
Download the complete datasheet for Onsemi NTTFS4821NTAG to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.