Single N-Channel Power MOSFET featuring 30V drain-source breakdown voltage and 69A continuous drain current. This surface mount device offers a low 5mΩ drain-source on-resistance and 4.1W power dissipation. Key specifications include a 1.9V nominal gate-source voltage, 5.5ns fall time, and 18ns turn-off delay. Packaged in a WDFN8 3.3x3.3mm footprint, it operates from -55°C to 150°C and is RoHS compliant.
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Onsemi NTTFS4824NTAG technical specifications.
| Continuous Drain Current (ID) | 20.6A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.8R |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 2.363nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 660mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 4.1W |
| Radiation Hardening | No |
| Rds On Max | 5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 13ns |
| Width | 3.15mm |
| RoHS | Compliant |
No datasheet is available for this part.
