The N-CHANNEL MOSFET has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 22.3W and a power dissipation of 2.11W. The device is lead free and RoHS compliant. The MOSFET has a drain to source breakdown voltage of 30V and a drain to source resistance of 17mR. It also has an input capacitance of 920pF and a gate to source voltage of 20V.
PolarityN-CHANNEL
Power2.11W
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Technical Specifications
Onsemi NTTFS4929NTWG technical specifications.
General
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 17mR |
| Element Configuration | Single |
| Fall Time | 6.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 920pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22.3W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.11W |
| Radiation Hardening | No |
| Rds On Max | 11mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS4929NTWG Datasheet
Download the complete datasheet for Onsemi NTTFS4929NTWG to view detailed technical specifications.
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