The NTTFS4930NTAG is an N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 790mW and a maximum drain to source breakdown voltage of 30V. The device features a drain to source resistance of 30mR and a continuous drain current of 23A. It is packaged in a WDFN-8 package and is lead free.
PolarityN-CHANNEL
Power2.06W
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Technical Specifications
Onsemi NTTFS4930NTAG technical specifications.
General
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Drain to Source Voltage (Vdss) | 30V |
| Element Configuration | Single |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 476pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 790mW |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.06W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS4930NTAG Datasheet
Download the complete datasheet for Onsemi NTTFS4930NTAG to view detailed technical specifications.
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