The NTTFS4930NTWG is a single N-channel MOSFET from Onsemi with a maximum operating temperature of -55°C to 150°C and a maximum power dissipation of 20.2W. It features a continuous drain current of 23A and a drain to source breakdown voltage of 30V. The device is packaged in a WDFN-8 configuration and is RoHS compliant. The MOSFET has a maximum drain to source resistance of 30mR and a maximum Rds on of 23mR.
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Onsemi NTTFS4930NTWG technical specifications.
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 30mR |
| Element Configuration | Single |
| Fall Time | 3.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 476pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 20.2W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.06W |
| Radiation Hardening | No |
| Rds On Max | 23mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTTFS4930NTWG to view detailed technical specifications.
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