This device is a single N-channel power MOSFET rated for 30 V drain-to-source voltage and up to 79 A continuous drain current at case temperature. It uses a WDFN8 (µ8FL) package and is specified for low on-resistance, low capacitance, and optimized gate charge to reduce conduction and switching losses. The datasheet specifies a maximum RDS(on) of 4.0 mΩ at 10 V gate drive and 5.5 mΩ at 4.5 V gate drive. It is intended for low-side DC-DC converters, power load switches, notebook battery management, and motor control, with an operating junction temperature range of -55 °C to +150 °C.
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Onsemi NTTFS4932N technical specifications.
| Channel Type | N-Channel |
| Drain-to-Source Voltage | 30V |
| Gate-to-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 79A |
| Pulsed Drain Current | 235A |
| Drain-to-Source On Resistance @ VGS=10V | 4.0 maxmΩ |
| Drain-to-Source On Resistance @ VGS=4.5V | 5.5 maxmΩ |
| Gate Threshold Voltage | 1.2 to 2.2V |
| Input Capacitance | 3111pF |
| Output Capacitance | 1064pF |
| Reverse Transfer Capacitance | 42pF |
| Total Gate Charge @ VGS=4.5V | 20nC |
| Total Gate Charge @ VGS=10V | 46.5nC |
| Forward Transconductance | 46S |
| Junction-to-Case Thermal Resistance | 2.9°C/W |
| Operating Junction Temperature Range | -55 to +150°C |
| Avalanche Energy | 92.4mJ |
| Package | WDFN8 (µ8FL), Case 511AB |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
