This device is a single N-channel power MOSFET rated for 30 V drain-to-source voltage and 75 A continuous drain current at case temperature. It uses an m8FL WDFN8 package and is specified with low on-resistance of 4.5 mΩ maximum at 10 V gate drive and 7.0 mΩ maximum at 4.5 V gate drive. The datasheet lists 35.5 nC typical total gate charge at 10 V, 2540 pF typical input capacitance, and 38.5 ns typical reverse recovery time. It is intended for low-side DC-DC converters, power load switching, notebook battery management, and motor control. The device is identified as Pb-free, halogen-free or BFR-free, and RoHS compliant.
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Onsemi NTTFS4937N technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 30V |
| Continuous Drain Current | 75A |
| Gate-Source Voltage | ±20V |
| Drain-Source On Resistance @ VGS=10V | 4.5 maxmΩ |
| Drain-Source On Resistance @ VGS=4.5V | 7.0 maxmΩ |
| Gate Threshold Voltage | 1.2 to 2.2V |
| Forward Transconductance | 37 typS |
| Input Capacitance | 2540 typpF |
| Output Capacitance | 893 typpF |
| Reverse Transfer Capacitance | 26 typpF |
| Total Gate Charge @ VGS=10V | 35.5 typnC |
| Total Gate Charge @ VGS=4.5V | 15.7 typnC |
| Gate-Source Charge | 7.6 typnC |
| Gate-Drain Charge | 1.9 typnC |
| Turn-On Delay Time @ VGS=10V | 9.8 typns |
| Rise Time @ VGS=10V | 19.8 typns |
| Turn-Off Delay Time @ VGS=10V | 28.8 typns |
| Fall Time @ VGS=10V | 4.0 typns |
| Forward Diode Voltage | 1.1 maxV |
| Reverse Recovery Time | 38.5 typns |
| Reverse Recovery Charge | 33 typnC |
| Junction-to-Case Thermal Resistance | 2.9°C/W |
| Operating Junction Temperature | -55 to +150°C |
| Package Type | WDFN8 (m8FL) |
| Pb-free | Yes |
| Halogen Free / Bfr Free | Yes |
| RoHS | Compliant |
