N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 11.2A continuous drain current. This single MOSFET offers a low 9mOhm drain-source on-resistance at 10V gate-source voltage. Housed in an 8-pin WDFN EP package with a 3.05mm x 3.05mm footprint and 0.75mm maximum height, it is designed for surface mounting. Key electrical characteristics include a typical gate charge of 7.7nC at 4.5V and 17.3nC at 10V, with an input capacitance of 1194pF at 15V drain-source voltage. Maximum power dissipation is 4300mW, with an operating temperature range of -55°C to 150°C.
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Onsemi NTTFS4945NTAG technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | DFN |
| Package/Case | WDFN EP |
| Package Description | Very Very Thin Dual Flat Package No Lead, Exposed Pad |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 3.05 |
| Package Width (mm) | 3.05 |
| Package Height (mm) | 0.75(Max) |
| Seated Plane Height (mm) | 0.75 |
| Pin Pitch (mm) | 0.65 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 11.2A |
| Maximum Drain Source Resistance | 9@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]|17.3@10VnC |
| Typical Gate Charge @ 10V | 17.3nC |
| Typical Input Capacitance @ Vds | 1194@15VpF |
| Maximum Power Dissipation | 4300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Cage Code | 5V1P1 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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