This device is a single N-channel power MOSFET rated for 30 V drain-to-source voltage and up to 67 A continuous drain current at case temperature. It is offered in a WDFN8 package and is specified for low on-resistance, with a maximum of 4.2 mΩ at 10 V gate drive and 6.1 mΩ at 4.5 V gate drive. The datasheet lists low gate charge and capacitance characteristics that support efficient switching in DC-DC converters, power load switches, and notebook battery management circuits. It operates over a junction temperature range of -55 °C to 150 °C and is identified as Pb-free, halogen-free/BFR-free, and RoHS compliant.
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Onsemi NTTFS4C06N technical specifications.
| Drain-to-Source Voltage | 30V |
| Gate-to-Source Voltage | +/-20V |
| Continuous Drain Current (Tc=25°C) | 67A |
| Continuous Drain Current (Ta=25°C, 1 in² pad) | 18A |
| Pulsed Drain Current | 166A |
| Power Dissipation (Tc=25°C) | 31W |
| Drain-to-Source On Resistance @ VGS=10V | 4.2 maxmΩ |
| Drain-to-Source On Resistance @ VGS=4.5V | 6.1 maxmΩ |
| Gate Threshold Voltage | 1.3 to 2.2V |
| Forward Transconductance | 58 typS |
| Input Capacitance | 1683 typ, 3366 maxpF |
| Output Capacitance | 841 typ, 1682 maxpF |
| Reverse Transfer Capacitance | 40 typpF |
| Total Gate Charge @ VGS=10V | 26 typ, 36 maxnC |
| Reverse Recovery Time | 34 typns |
| Operating Junction Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 4.1°C/W |
| RoHS | Compliant |
| Pb-free | Yes |
| Halogen Free/bfr Free | Yes |
