Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 37A continuous drain current. Offers a maximum drain-source on-resistance of 11.5mΩ at a 10V gate-source voltage. This component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 33W. Packaged in a compact WDFN8 3.3x3.3mm surface-mount package, it includes fast switching characteristics with turn-on delay time of 10ns and fall time of 22ns.
Package0101
PolarityN-CHANNEL
Power33W
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Technical Specifications
Onsemi NTTFS5820NLTAG technical specifications.
General
| Package/Case | 0101 |
| Continuous Drain Current (ID) | 37A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 10.1mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 11.5MR |
| Element Configuration | Single |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.8mm |
| Input Capacitance | 1.462nF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 11.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 10ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS5820NLTAG Datasheet
Download the complete datasheet for Onsemi NTTFS5820NLTAG to view detailed technical specifications.
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