Single N-Channel Power MOSFET featuring 60V drain-source breakdown voltage and 20A continuous drain current. Offers a low 24mΩ drain-source resistance (Rds On Max) at a 10V gate-source voltage. This component operates within a temperature range of -55°C to 175°C and has a maximum power dissipation of 19W. Packaged in a compact WDFN8 3.3x3.3mm surface-mount package, it is RoHS compliant.
PolarityN-CHANNEL
Power19W
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Technical Specifications
Onsemi NTTFS5826NLTAG technical specifications.
General
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 24mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.75mm |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Length | 3.15mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 19W |
| Radiation Hardening | No |
| Rds On Max | 24mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9ns |
| Width | 3.15mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTTFS5826NLTAG Datasheet
Download the complete datasheet for Onsemi NTTFS5826NLTAG to view detailed technical specifications.
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