This device is a 60 V N-channel shielded-gate power MOSFET for compact power designs. It provides up to 78 A continuous drain current at case temperature of 25 °C and 5.2 mΩ maximum drain-source on-resistance at 10 V gate drive. The part is supplied in a 3.3 mm by 3.3 mm WDFN-8 package with 63 W power dissipation at 25 °C case temperature. It is intended for primary DC-DC switching, synchronous rectification in DC-DC and AC-DC stages, and motor-drive applications. The device is RoHS compliant and rated for junction temperatures from -55 °C to 150 °C.
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Onsemi NTTFS5D1N06HL technical specifications.
| Channel Polarity | N-Channel |
| Drain to Source Voltage | 60V |
| Continuous Drain Current (Tc=25°C) | 78A |
| Continuous Drain Current (Tc=100°C) | 49A |
| Continuous Drain Current (Ta=25°C) | 18A |
| Pulsed Drain Current | 216A |
| Drain-Source On-Resistance Max @ Vgs=10V | 5.2mΩ |
| Drain-Source On-Resistance Max @ Vgs=4.5V | 7.1mΩ |
| Gate Threshold Voltage | 1.2 to 2.0V |
| Total Gate Charge Typ @ Vgs=10V | 22.5nC |
| Total Gate Charge Typ @ Vgs=4.5V | 10.3nC |
| Input Capacitance Typ | 1610pF |
| Power Dissipation (Tc=25°C) | 63W |
| Thermal Resistance Junction-to-Case | 2°C/W |
| Operating Junction Temperature Range | -55 to 150°C |
| RoHS | Compliant |
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