Dual N-Channel MOSFET, SOT-963 package, featuring 20V drain-source breakdown voltage and 1.5 Ohm maximum drain-source on-resistance. This component offers a continuous drain current of 220mA and a threshold voltage of 1V. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 200mW. Includes ESD protection and is RoHS compliant.
PackageSOT-963
PolarityN-CHANNEL
Power200mW
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Technical Specifications
Onsemi NTUD3170NZT5G technical specifications.
General
| Package/Case | SOT-963 |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 1.5R |
| Element Configuration | Dual |
| Fall Time | 80ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.4mm |
| Input Capacitance | 12.5pF |
| Lead Free | Lead Free |
| Length | 1.05mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Rds On Max | 1.5R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 142ns |
| Turn-On Delay Time | 16.5ns |
| Width | 0.85mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTUD3170NZT5G Datasheet
Download the complete datasheet for Onsemi NTUD3170NZT5G to view detailed technical specifications.
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