Dual N-Channel MOSFET featuring 20V drain-to-source breakdown voltage and 220mA continuous drain current. Offers 0.75 ohm drain-to-source resistance at 4.5V gate-to-source voltage. Surface mountable in a SOT-963 package, this component operates from -55°C to 150°C with a maximum power dissipation of 125mW. Includes 16.5ns turn-on and 142ns turn-off delay times.
PackageSOT-963
MountingSurface Mount
Power125mW
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Technical Specifications
Onsemi NTUD3174NZT5G technical specifications.
General
| Package/Case | SOT-963 |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 400um |
| Input Capacitance | 12.5pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 125mW |
| Rds On Max | 1.5R |
| Turn-Off Delay Time | 142ns |
| Turn-On Delay Time | 16.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTUD3174NZT5G Datasheet
Download the complete datasheet for Onsemi NTUD3174NZT5G to view detailed technical specifications.
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