Dual N-Channel MOSFET featuring 20V drain-to-source breakdown voltage and 220mA continuous drain current. Offers 0.75 ohm drain-to-source resistance at 4.5V gate-to-source voltage. Surface mountable in a SOT-963 package, this component operates from -55°C to 150°C with a maximum power dissipation of 125mW. Includes 16.5ns turn-on and 142ns turn-off delay times.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTUD3174NZT5G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTUD3174NZT5G technical specifications.
| Package/Case | SOT-963 |
| Continuous Drain Current (ID) | 220mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 20V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 400um |
| Input Capacitance | 12.5pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125mW |
| Mount | Surface Mount |
| Number of Channels | 2 |
| Packaging | Cut Tape |
| Power Dissipation | 125mW |
| Rds On Max | 1.5R |
| Turn-Off Delay Time | 142ns |
| Turn-On Delay Time | 16.5ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTUD3174NZT5G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
