The NTZD3152PT1H is a dual P-channel JFET transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 430mA and a drain to source voltage of 20V. The device is packaged in a SOT-563 package and is RoHS compliant. It has a maximum power dissipation of 250mW and a gate to source voltage of 6V.
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Onsemi NTZD3152PT1H technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Dual |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 175pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 280mW |
| Rds On Max | 900mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.000289oz |
| RoHS | Compliant |
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