
Dual N-Channel MOSFET, 20V DC rated voltage, 540mA continuous drain current, and 550mΩ maximum drain-source on-resistance. Features include 4ns fall time, 6ns turn-on delay, and 16ns turn-off delay. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in SOT-563 on an 8000-piece tape and reel.
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Onsemi NTZD3154NT5G technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 540mA |
| Current Rating | 540mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 700mR |
| Drain-source On Resistance-Max | 400MR |
| Element Configuration | Dual |
| Fall Time | 4ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 6ns |
| DC Rated Voltage | 20V |
| RoHS | Compliant |
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