Dual N and P-Channel complementary small signal MOSFETs in a SOT-563 package. Features 20V Drain to Source Voltage (Vdss) and 500mR maximum Drain-source On Resistance. Offers 430mA continuous drain current and 250mW power dissipation. Includes ESD protection and operates from -55°C to 150°C. Packaged on a 4000-piece tape and reel.
PackageSOT-563
Current Rating540mA
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Onsemi NTZD3155CT1G technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 430mA |
| Current Rating | 540mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 500mR |
| Element Configuration | Dual |
| Fall Time | 12ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.6mm |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 10ns |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTZD3155CT1G Datasheet
Download the complete datasheet for Onsemi NTZD3155CT1G to view detailed technical specifications.
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