Quick Jump:
Technical Specifications
Onsemi NTZD3155CT1H technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Resistance | 900mR |
| Element Configuration | Dual |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 150pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Channels | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL, P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Weight | 0.000289oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTZD3155CT1H Datasheet
Download the complete datasheet for Onsemi NTZD3155CT1H to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.