Quick Jump:
Technical Specifications
Onsemi NTZD3156CT1G technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 720mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 19.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 72pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 280mW |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTZD3156CT1G Datasheet
Download the complete datasheet for Onsemi NTZD3156CT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.