The NTZD3156CT2G is a dual MOSFET from Onsemi, featuring a P-CHANNEL and N-CHANNEL configuration with a maximum drain to source breakdown voltage of 20V. It has a continuous drain current of 430mA and a maximum power dissipation of 250mW. The device is packaged in a SOT-563 surface mount package and is RoHS compliant. The operating temperature range is from -55°C to 150°C.
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Onsemi NTZD3156CT2G technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 6.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 72pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 280mW |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTZD3156CT2G to view detailed technical specifications.
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