The NTZD3156CT5G is a dual N and P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 430mA and a drain to source breakdown voltage of 20V. The device features a drain to source resistance of 900mR and a maximum power dissipation of 250mW. It is packaged in a SOT-563 surface mount package and is lead free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Onsemi NTZD3156CT5G technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 430mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 6.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 72pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 280mW |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 29ns |
| RoHS | Compliant |
No datasheet is available for this part.
