Dual N-Channel Small Signal MOSFET, SOT-563 package, featuring 60V drain-to-source breakdown voltage and 294mA continuous drain current. Offers a maximum drain-source on-resistance of 1.6Ω. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 250mW. Includes ESD protection and is RoHS compliant.
PackageSOT-563
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Onsemi NTZD5110NT1G technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 294mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Drain-source On Resistance-Max | 1.6R |
| Element Configuration | Dual |
| Fall Time | 7.3ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 24.5pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 2 |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 63.7ns |
| Turn-On Delay Time | 12ns |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTZD5110NT1G Datasheet
Download the complete datasheet for Onsemi NTZD5110NT1G to view detailed technical specifications.
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