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Technical Specifications
Onsemi NTZD5110NT5G technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 294mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 1.6R |
| Element Configuration | Dual |
| Fall Time | 7.3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 24.5pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 250mW |
| Rds On Max | 1.6R |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 63.7ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTZD5110NT5G Datasheet
Download the complete datasheet for Onsemi NTZD5110NT5G to view detailed technical specifications.
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