Single P-Channel MOSFET for small signal applications. Features a -20V drain-source breakdown voltage and a continuous drain current of 860mA. Offers a maximum drain-source on-resistance of 150mΩ. Housed in a compact SOT-563 package with a 1.3mm width, 1.7mm length, and 0.6mm height. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 170mW. RoHS compliant and lead-free.
PackageSOT-563
Current Rating-950mA
PolarityP-CHANNEL
Power170mW
Quick Jump:
Technical Specifications
Onsemi NTZS3151PT1G technical specifications.
General
Package/Case
SOT-563
Continuous Drain Current (ID)
860mA
Current Rating
-950mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
195mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
150mR
Element Configuration
Single
Fall Time
12ns
Gate to Source Voltage (Vgs)
8V
Height
0.6mm
Input Capacitance
458pF
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170mW
Nominal Vgs
-1V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
170mW
Radiation Hardening
No
Rds On Max
150mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
-1V
Turn-Off Delay Time
23.7ns
Turn-On Delay Time
5ns
DC Rated Voltage
-20V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTZS3151PT1G Datasheet
Download the complete datasheet for Onsemi NTZS3151PT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
