Single P-Channel MOSFET for small signal applications. Features a -20V drain-source breakdown voltage and a continuous drain current of 860mA. Offers a maximum drain-source on-resistance of 150mΩ. Housed in a compact SOT-563 package with a 1.3mm width, 1.7mm length, and 0.6mm height. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 170mW. RoHS compliant and lead-free.
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Onsemi NTZS3151PT1G technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 860mA |
| Current Rating | -950mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 195mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 150mR |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 0.6mm |
| Input Capacitance | 458pF |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170mW |
| Nominal Vgs | -1V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 170mW |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 23.7ns |
| Turn-On Delay Time | 5ns |
| DC Rated Voltage | -20V |
| Width | 1.3mm |
| RoHS | Compliant |
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