The NTZS3151PT1H is a P-channel junction field-effect transistor with a maximum operating temperature range of -55°C to 150°C. It features an input capacitance of 458pF and a drain to source resistance of 150mR. The device is packaged in a SOT-563 package and is available in quantities of 4000 per reel. The NTZS3151PT1H is RoHS compliant and has a maximum power dissipation of 170mW.
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Onsemi NTZS3151PT1H technical specifications.
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 860mA |
| Drain to Source Resistance | 150mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 458pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23.7ns |
| Turn-On Delay Time | 5ns |
| RoHS | Compliant |
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