The NTZS3151PT5G is a single P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 170mW and a continuous drain current of 860mA. The device is packaged in a lead-free SOT-563 package and is RoHS compliant. The transistor has a drain to source breakdown voltage of -20V and a drain to source resistance of 195mR. It also features a gate to source voltage of 8V and an input capacitance of 458pF.
PackageSOT-563
Current Rating-860mA
PolarityP-CHANNEL
Power170mW
Quick Jump:
Technical Specifications
Onsemi NTZS3151PT5G technical specifications.
General
| Package/Case | SOT-563 |
| Continuous Drain Current (ID) | 860mA |
| Current Rating | -860mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 195mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 458pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 170mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 170mW |
| Rds On Max | 150mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23.7ns |
| DC Rated Voltage | -20V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTZS3151PT5G Datasheet
Download the complete datasheet for Onsemi NTZS3151PT5G to view detailed technical specifications.
No datasheet is available for this part.