The NVB25P06T4G is a single MOSFET with a maximum drain to source voltage of 60V and a continuous drain current of 27.5A. It features a TO-263-3 package and operates within a temperature range of -55°C to 175°C. The device has a maximum power dissipation of 120W and is lead free and RoHS compliant.
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Onsemi NVB25P06T4G technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 27.5A |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 1.68nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 82mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 14ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NVB25P06T4G to view detailed technical specifications.
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