The NVB5404NT4G is a single N-channel MOSFET with a maximum drain to source voltage of 40V and continuous drain current of 24A. It features a maximum power dissipation of 5.4W and is packaged in a TO-263-3 case. The device operates over a temperature range of -55 to 175°C and is compliant with RoHS regulations. The NVB5404NT4G has an input capacitance of 7nF and a maximum Rds on resistance of 4.5mΩ.
PackageTO-263-3
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Technical Specifications
Onsemi NVB5404NT4G technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 5.4W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVB5404NT4G Datasheet
Download the complete datasheet for Onsemi NVB5404NT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.