
The NVB6411ANT4G is a single N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 217W and is packaged in a TO-263-3 case. The device is RoHS compliant and features a drain to source resistance of 14mR. It can handle a continuous drain current of 77A and has a gate to source voltage of 20V.
Onsemi NVB6411ANT4G technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 77A |
| Drain to Source Resistance | 14mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 157ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.7nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 217W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 14mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 107ns |
| Turn-On Delay Time | 16ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NVB6411ANT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.