N-channel Silicon Carbide MOSFET designed for high-voltage applications. Features a low on-resistance of 20 mΩ and a drain-source voltage rating of 1200 V. Packaged in a D2PAK-7L surface-mount configuration, supplied on an 800-piece reel.
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Technical Specifications
Onsemi NVBG020N120SC1 technical specifications.
Compliance
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Onsemi NVBG020N120SC1 Datasheet
Download the complete datasheet for Onsemi NVBG020N120SC1 to view detailed technical specifications.
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