N-channel Silicon Carbide MOSFET featuring 1200 V breakdown voltage and 40 mΩ on-resistance. This discrete semiconductor component is designed for high-power applications, operating within a temperature range of -55°C to 175°C. It utilizes a 7-terminal D2PAK package (TO-263CB) with single terminal position and a single element configuration.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NVBG040N120SC1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Max Operating Temperature | 175 |
| Number of Terminals | 7 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263CB |
| Number of Elements | 1 |
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Download the complete datasheet for Onsemi NVBG040N120SC1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
