N-channel Silicon Carbide MOSFET featuring 1200 V breakdown voltage and 40 mΩ on-resistance. This discrete semiconductor component is designed for high-power applications, operating within a temperature range of -55°C to 175°C. It utilizes a 7-terminal D2PAK package (TO-263CB) with single terminal position and a single element configuration.
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Technical Specifications
Onsemi NVBG040N120SC1 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 7 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263CB |
| Number of Elements | 1 |
Compliance
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Onsemi NVBG040N120SC1 Datasheet
Download the complete datasheet for Onsemi NVBG040N120SC1 to view detailed technical specifications.
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