Single N-channel Power MOSFET, 60V Drain-Source Voltage, 17A Continuous Drain Current, and 64mOhm maximum Drain-Source On-Resistance. Features logic-level gate drive, 3.4W power dissipation, and a fast switching speed with turn-on delay of 9.4ns and fall time of 35ns. Encased in a DPAK surface mount package, this component operates from -55°C to 175°C and is RoHS compliant.
PackageDPAK
PolarityN-CHANNEL
Power3.4W
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Technical Specifications
Onsemi NVD5490NLT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 66mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.38mm |
| Input Capacitance | 365pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 49W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.4W |
| Radiation Hardening | No |
| Rds On Max | 64mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9.4ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVD5490NLT4G Datasheet
Download the complete datasheet for Onsemi NVD5490NLT4G to view detailed technical specifications.
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