Onsemi
NVD5806NT4G
Power MOSFET 40V, 33A, 19 mOhm, Single N-Channel, DPAK. Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
PackageDPAK
PolarityN-CHANNEL
Power40W
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Technical Specifications
Onsemi NVD5806NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVD5806NT4G Datasheet
Download the complete datasheet for Onsemi NVD5806NT4G to view detailed technical specifications.
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