The NVD5806NT4G is an N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 33A and a maximum power dissipation of 40W. The device is packaged in a DPAK package and is lead-free and RoHS compliant.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 12.7mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 860pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Rds On Max | 19mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
These are design resources that include the Onsemi NVD5806NT4G
This onsemi notice (PD22357Z1) announces the reactivation of several MOSFET devices previously scheduled for discontinuance in the 2Q2018 notification.
Onsemi product discontinuance notice PD22748XC for Batch 4 of Q2 2019, including last time buy dates and recommended replacement parts for various integrated circuits.
