The NVD5807NT4G is a single N-channel MOSFET with a drain to source breakdown voltage of 40V and a continuous drain current of 23A. It has a drain to source resistance of 20mR and a maximum power dissipation of 33W. The device is packaged in a DPAK package and is lead free. The operating temperature range is from -55°C to 175°C.
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| Package/Case | DPAK |
| Continuous Drain Current (ID) | 23A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 603pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 33W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 33W |
| Radiation Hardening | No |
| Rds On Max | 31mR |
| RoHS Compliant | Yes |
| RoHS | Compliant |
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