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Technical Specifications
Onsemi NVD5890NT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 123A |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.76nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 107W |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 3.7mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 39ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVD5890NT4G Datasheet
Download the complete datasheet for Onsemi NVD5890NT4G to view detailed technical specifications.
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