Onsemi
NVD6416ANLT4G
N-Channel Power MOSFET 100V, 19A, 74mΩ Power MOSFET 100V, 19A, 74 mOhm, Single N-Channel, DPAK, Logic Level., DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
PackageDPAK
PolarityN-CHANNEL
Power71W
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Technical Specifications
Onsemi NVD6416ANLT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 74mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 74MR |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 71W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 71W |
| Radiation Hardening | No |
| Rds On Max | 74mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 7ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVD6416ANLT4G Datasheet
Download the complete datasheet for Onsemi NVD6416ANLT4G to view detailed technical specifications.
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