
Single P-Channel Power MOSFET featuring a -60V drain-source voltage and a continuous drain current of 2.6A. Offers a maximum drain-source on-resistance of 170mΩ. Designed for automotive applications, this component is housed in a SOT-223-4 package and operates within a temperature range of -55°C to 175°C. Key switching characteristics include an 11ns turn-on delay and a 38ns fall time. Packaged on a 1000-piece tape and reel, this RoHS compliant device is lead-free.
Onsemi NVF2955T1G technical specifications.
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 2.6A |
| Drain to Source Resistance | 154mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 170MR |
| Element Configuration | Single |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 492pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.3W |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.008826oz |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NVF2955T1G to view detailed technical specifications.
No datasheet is available for this part.
