N-Channel JFET, SOT-223-4 package, offering 60V drain-to-source breakdown voltage and 3A continuous drain current. Features low 88mΩ drain-to-source resistance at Vgs=0V and 110mΩ Rds On. Operates across a -55°C to 175°C temperature range with 1.3W max power dissipation. Includes 455pF input capacitance and fast switching times with 9.4ns turn-on and 13ns fall times. RoHS compliant and lead-free.
PackageSOT-223-4
PolarityN-CHANNEL
Power2.1W
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Technical Specifications
Onsemi NVF3055-100T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 88mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.65mm |
| Input Capacitance | 455pF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.4ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVF3055-100T1G Datasheet
Download the complete datasheet for Onsemi NVF3055-100T1G to view detailed technical specifications.
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