Single P-Channel Power MOSFET featuring a -20V drain-source voltage and 10A continuous drain current. Offers a low 44mΩ drain-source resistance at Vgs=8V. Housed in a SOT-223-4 package, this component operates from -55°C to 150°C with a maximum power dissipation of 8.3W. Ideal for automotive applications, it boasts a 60ns fall time and 8ns turn-on delay.
PackageSOT-223-4
PolarityP-CHANNEL
Power8.3W
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Technical Specifications
Onsemi NVF6P02T3G technical specifications.
General
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -25V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.65mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 8ns |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVF6P02T3G Datasheet
Download the complete datasheet for Onsemi NVF6P02T3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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