Single P-Channel Power MOSFET featuring a -20V drain-source voltage and 10A continuous drain current. Offers a low 44mΩ drain-source resistance at Vgs=8V. Housed in a SOT-223-4 package, this component operates from -55°C to 150°C with a maximum power dissipation of 8.3W. Ideal for automotive applications, it boasts a 60ns fall time and 8ns turn-on delay.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NVF6P02T3G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-223-4 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | -25V |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 20V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 8V |
| Height | 1.65mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.3W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 8.3W |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 8ns |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NVF6P02T3G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
