Single P-Channel Trench Power MOSFET featuring a 20V drain-to-source voltage (Vdss) and a continuous drain current (ID) of 3.2A. This surface mount component offers a low on-resistance (Rds On Max) of 67mΩ and a maximum power dissipation of 1.2W. With an input capacitance of 850pF, it operates across a wide temperature range from -55°C to 150°C. The device is lead-free and RoHS compliant, supplied in tape and reel packaging.
MountingSurface Mount
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Technical Specifications
Onsemi NVJS4151PT1G technical specifications.
General
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance | 850pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 67mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVJS4151PT1G Datasheet
Download the complete datasheet for Onsemi NVJS4151PT1G to view detailed technical specifications.
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