The NVJS4405NT1G is an N-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 1A and a drain to source voltage of 25V. The device features a drain to source resistance of 350mR and a maximum power dissipation of 630mW. It is packaged in a lead-free SOT-363-6 package and is RoHS compliant.
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Onsemi NVJS4405NT1G technical specifications.
| Package/Case | SOT-363-6 |
| Continuous Drain Current (ID) | 1A |
| Drain to Source Resistance | 350mR |
| Drain to Source Voltage (Vdss) | 25V |
| Element Configuration | Single |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 60pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 630mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 350mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 6ns |
| RoHS | Compliant |
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