Dual N-Channel Power MOSFET featuring 60V drain-to-source voltage and 36mΩ drain-to-source resistance. This component offers a continuous drain current of 6.4A and a maximum power dissipation of 3.1W. Designed with two N-channel elements in a dual configuration, it operates within a temperature range of -55°C to 175°C. The DFN8 5x6 package with 1.27P pitch ensures efficient thermal performance. This RoHS and Halogen Free compliant device is supplied on a 1500-piece tape and reel.
PackageDFN
PolarityN-CHANNEL
Power3.1W
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Technical Specifications
Onsemi NVMFD5483NLT1G technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
6.4A
Drain to Source Resistance
36mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Dual
Fall Time
23.5ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
668pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Number of Channels
2
Number of Elements
2
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.1W
Radiation Hardening
No
Rds On Max
36mR
RoHS Compliant
Yes
Turn-Off Delay Time
37.5ns
Turn-On Delay Time
6.8ns
Compliance
RoHS
Compliant
Datasheet
Onsemi NVMFD5483NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5483NLT1G to view detailed technical specifications.
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