Dual N-Channel Power MOSFET featuring 60V drain-to-source voltage and 36mΩ drain-to-source resistance. This component offers a continuous drain current of 6.4A and a maximum power dissipation of 3.1W. Designed with two N-channel elements in a dual configuration, it operates within a temperature range of -55°C to 175°C. The DFN8 5x6 package with 1.27P pitch ensures efficient thermal performance. This RoHS and Halogen Free compliant device is supplied on a 1500-piece tape and reel.
Onsemi NVMFD5483NLT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 6.4A |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 23.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 668pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Number of Channels | 2 |
| Number of Elements | 2 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 37.5ns |
| Turn-On Delay Time | 6.8ns |
| RoHS | Compliant |
No datasheet is available for this part.
