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Onsemi NVMFD5485NLT1G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Resistance | 44mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 23.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.9W |
| Number of Channels | 2 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27.8ns |
| Turn-On Delay Time | 9.5ns |
| RoHS | Compliant |
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