The NVMFD5485NLWFT3G is a dual N-channel MOSFET with a maximum drain to source voltage of 60V and continuous drain current of 5.3A. It features a fast switching time with a fall time of 23.7ns and turn-off delay time of 27.8ns. The device is packaged in a lead-free DFN package and is suitable for operating temperatures between -55°C and 175°C.
Onsemi NVMFD5485NLWFT3G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 5.3A |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 23.7ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 560pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.9W |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.9W |
| Radiation Hardening | No |
| Rds On Max | 44mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27.8ns |
| Turn-On Delay Time | 9.5ns |
| RoHS | Compliant |
No datasheet is available for this part.
