Dual N-Channel Logic Level Power MOSFET featuring 60V drain-source voltage and 12A continuous drain current. Offers 65mΩ drain-source resistance and operates with a 20V gate-source voltage. This component is housed in a DFN8 5x6 package, providing 2 N-channel elements with a dual configuration. Designed for high-temperature operation up to 175°C, it is halogen-free, lead-free, and RoHS compliant.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NVMFD5489NLT1G technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
12A
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Dual
Fall Time
21ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
330pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3W
Number of Channels
2
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
65mR
RoHS Compliant
Yes
Turn-Off Delay Time
31ns
Turn-On Delay Time
7ns
Weight
0.001319oz
Compliance
RoHS
Compliant
Datasheet
Onsemi NVMFD5489NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5489NLT1G to view detailed technical specifications.
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