Dual N-Channel Logic Level Power MOSFET featuring 60V drain-source voltage and 12A continuous drain current. Offers 65mΩ drain-source resistance and operates with a 20V gate-source voltage. This component is housed in a DFN8 5x6 package, providing 2 N-channel elements with a dual configuration. Designed for high-temperature operation up to 175°C, it is halogen-free, lead-free, and RoHS compliant.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NVMFD5489NLT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 21ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Number of Channels | 2 |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.001319oz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFD5489NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5489NLT1G to view detailed technical specifications.
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