Dual N-Channel Logic Level Power MOSFET, 60V Vdss, 12A continuous drain current, and 65mΩ Rds On. Features include 2 N-Channel FETs in a DFN8 5x6 package with 1.27P pitch, offering 7ns turn-on delay and 21ns fall time. This component operates from -55°C to 175°C, supports a 20V gate-to-source voltage, and has a max power dissipation of 3W. It is RoHS compliant, Halogen Free, and supplied on a 5000-piece tape and reel.
Onsemi NVMFD5489NLWFT3G technical specifications.
| Package/Case | DFN |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| Fall Time | 21ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 330pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Number of Channels | 2 |
| Package Quantity | 5000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 31ns |
| Turn-On Delay Time | 7ns |
| Weight | 0.001319oz |
| RoHS | Compliant |
No datasheet is available for this part.
