The NVMFD5853NWFT1G is a 2-channel N-channel MOSFET from Onsemi, featuring a maximum drain to source voltage of 40V and continuous drain current of 12A. It has a maximum power dissipation of 3.1W and is packaged in a surface mount DFN package. The device operates over a temperature range of -55°C to 175°C and is compliant with RoHS regulations.
PackageDFN
MountingSurface Mount
Power3.1W
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Technical Specifications
Onsemi NVMFD5853NWFT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 3ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.225nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.1W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFD5853NWFT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5853NWFT1G to view detailed technical specifications.
No datasheet is available for this part.