The NVMFD5873NLT1G is a dual N-channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and is packaged in a halogen-free, lead-free DFN package. The device is RoHS compliant and features a drain to source resistance of 13mR and a gate to source voltage of 20V.
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NVMFD5873NLT1G technical specifications.
General
| Package/Case | DFN |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 13mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Dual |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 1.56nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 13mR |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NVMFD5873NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5873NLT1G to view detailed technical specifications.
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