Onsemi
NVMFD5873NLT1G
Power MOSFET 60V, 58A, 13 mOhm, Dual N-Channel, SO8-FL, Logic Level., DFN8 5x6, 1.27P Dual Flag (SO8FL-Dual), 1500-REEL
PackageDFN
PolarityN-CHANNEL
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Technical Specifications
Onsemi NVMFD5873NLT1G technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
10A
Drain to Source Resistance
13mR
Drain to Source Voltage (Vdss)
60V
Element Configuration
Dual
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
1.56nF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
13mR
RoHS Compliant
Yes
Compliance
RoHS
Compliant
Datasheet
Onsemi NVMFD5873NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5873NLT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.