Dual N-Channel Logic Level Power MOSFET featuring 60V drain-source breakdown voltage and 17A continuous drain current. Offers a low 39mΩ maximum drain-source on-resistance. Packaged in a compact 5x6mm DFN8 footprint with a 1.27P pitch, this component operates from -55°C to 175°C and is RoHS compliant. Includes two N-channel elements with a 3V threshold voltage and 8.1ns turn-on delay.
PackageDFN
PolarityN-CHANNEL
Power23W
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Technical Specifications
Onsemi NVMFD5877NLT1G technical specifications.
General
Package/Case
DFN
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
60mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
39MR
Element Configuration
Dual
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Height
1.05mm
Input Capacitance
540pF
Lead Free
Lead Free
Length
6.1mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.2W
Number of Elements
2
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
23W
Radiation Hardening
No
Rds On Max
39mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
3V
Turn-Off Delay Time
14.5ns
Turn-On Delay Time
8.1ns
Width
5.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NVMFD5877NLT1G Datasheet
Download the complete datasheet for Onsemi NVMFD5877NLT1G to view detailed technical specifications.
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